论文标题
保护退火后，Arpes揭示的延长电子掺杂的铜层的超导圆顶
Extended superconducting dome of electron-doped cuprates after protect annealing revealed by ARPES
论文作者
论文摘要
掺杂电子的铜酸盐通常具有更强的抗铁磁相和比孔掺杂的圆顶更窄的超导（SC）圆顶。最近，已经对通过保护退火方法制备的PR1.3-XLA0.7CEXCUO4-δ（PLCCO）的散装单晶进行了广泛的研究，并揭示了许多与从传统方法退火的样品中获得的许多有趣的特性。在这里，我们报告了保护退火后PLCCO单晶的系统角度分辨光发射光谱研究。结果表明，从费米表面区域估计的实际电子浓度（NFS）明显大于CE浓度X，而新的基于NFS的PLCCO的新型SC圆顶比使用常规退火方法制备的样品得出的基于X的SC DOME更扩展到过多的SC圆顶。
The electron-doped cuprates are usually characterized by a more robust antiferromagnetic phase and a much narrower superconducting (SC) dome than those of the hole-doped counterparts. Recently, bulk single crystals of Pr1.3-xLa0.7CexCuO4-δ (PLCCO) prepared by the protect annealing method have been studied extensively and revealed many intriguing properties that were different from those obtained from samples annealed by the conventional methods. Here, we report on a systematic angle-resolved photoemission spectroscopy study of PLCCO single crystals after protect annealing. The results indicate that the actual electron concentration (nFS ) estimated from the Fermi-surface area is significantly larger than the Ce concentration x and the new nFS-based SC dome of PLCCO is more extended towards the overdoped side than the x-based SC dome derived for samples prepared using the conventional annealing method.
