论文标题
使用非常薄的超快速硅探测器（UFSD）改善时间分辨率的潜力
Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)
论文作者
论文摘要
超快速硅探测器（UFSD）是N-in-P硅检测器，使用高电阻率P-bulk和传感器连接之间的高度掺杂的P ++层实现中等增益（通常为5至25）。增益的存在允许撞击最小电离电荷颗粒的出色时间测量。一个重要的设计考虑因素是传感器厚度，这对可实现的时间分辨率产生了强烈影响。我们提出了测量20微米至50微米之间厚度的LGAD的结果。数据适合捕获电子抖动和Landau波动对时间分辨率的影响的公式。数据说明了具有饱和电子漂移速度和较大的信噪比以实现良好时间分辨率的重要性。 20微米厚度的传感器提供了每次测量10至15 ps时间分辨率的电位，比通常使用的50个微米传感器的值显着改善。
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for impinging minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a strong impact on the achievable time resolution. We present the result of measurements for LGADs of thickness between 20 micro-m and 50 micro-m. The data are fit to a formula that captures the impact of both electronic jitter and Landau fluctuations on the time resolution. The data illustrate the importance of having a saturated electron drift velocity and a large signal-to-noise in order to achieve good time resolution. Sensors of 20 micro-m thickness offer the potential of 10 to 15 ps time resolution per measurement, a significant improvement over the value for the 50 micro-m sensors that have been typically used to date.
