论文标题
简单准确的方法来模拟纳米级电路中的电阻和电线
Simple and accurate method to simulate resistors and wires in a nanoscale circuit
论文作者
论文摘要
在求解Schrödinger方程以模拟纳米级电路时，我们注意到某些金属中电子的平均自由路径的平均自由路径高达48 nm。因此，波函数可以通过与显示隧道连接外部电势的线相对应的电线来连贯地传播。电压源可以建模为电势的跳跃。同样，电阻跨电势可以建模为尖锐的滴或向下倾斜线，以显示电势的下降。然后可以通过将该电压下降除以计算出的电流密度和有效横截面区域的乘积来确定电阻。
In solving the Schrödinger equation to simulate a nanoscale circuit, we note that the mean free path for electrons in some metals is as large as 48 nm. Thus, the wavefunction may propagate coherently through wires corresponding to the lines that show the potential outside of the tunneling junction. A voltage source may be modeled as a jump in the potential. Similarly, the potential across a resistor may be modeled as a sharp drop or a downward sloping line to show a decrease in the potential. Then the resistance may be determined by dividing this voltage drop by the product of the calculated current density and the effective cross-sectional area.
