论文标题
低极化，耐力和保留率低于5 nm hf $ _ {0.5} $ zr $ _ {0.5} $ o $ $ _2 $ tilms
High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films
论文作者
论文摘要
铁电HFO $ _2 $是新存储器设备的有前途材料，但是重要属性需要显着改善应用程序。但是，先例文献表明，两极分化，耐力和保留之间存在困境。由于所有这些属性都应同时较高，因此克服此问题的相关性是最高的。在这里，我们证明了高晶体质量低于5 nm HF0.5ZR0.5O2电容器，与Si（001）术语（001）集成在一起，目前高极化（在原始状态下为27个UC/CM2的2PR），使用E耐力（2Pr> 6 UC/CM2）和10年后（2PR> 6 uc/cm2）和10年（2PR）（2pr）（2PR）（2PR> 2PR> 2pr> CM2/2PR> CM2/2PR> 2pr> CM2 poling条件（2.5 V）。这项成就在比5 nm的薄膜中证明了这一成就，因此在铁电隧道连接和其他设备中打开了明亮的可能性。
Ferroelectric HfO$_2$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance and retention exists. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf0.5Zr0.5O2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2Pr of 27 uC/cm2 in the pristine state), endurance (2Pr > 6 uC/cm2 after E11 cycles) and retention (2Pr > 12 uC/cm2 extrapolated at 10 years) using same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices.
