论文标题
基于单个设备表征的石墨烯FET技术的接触电阻提取
Contact resistance extraction of graphene FET technologies based on individual device characterization
论文作者
论文摘要
介绍了基于电气设备特性的直接接触电阻提取方法，并在此处应用于来自不同技术的石墨烯场现场效应晶体管。这些方法是对最初为常规晶体管开发的提取程序的经过教育的改编，该方法是通过在某些偏见条件下利用石墨烯设备中的漂移 - 扩散样运输。与其他可用的石墨烯晶体管接触性提取的方法相反，此处使用的实际方法不需要制造专用测试结构或内部设备现象表征。使用基于仿真的数据评估方法，并应用于制造的设备。提取的值接近使用其他更复杂的方法获得的值。偏置依赖性接触和通道电阻研究，偏置依赖性的高频性能研究和接触工程研究通过提取的接触电阻值增强和评估。
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of extraction procedures originally developed for conventional transistors by exploiting the drift-diffusion-like transport in graphene devices under certain bias conditions. In contrast to other available approaches for contact resistance extraction of graphene transistors, the practical methods used here do not require either the fabrication of dedicated test structures or internal device phenomena characterization. The methodologies are evaluated with simulation-based data and applied to fabricated devices. The extracted values are close to the ones obtained with other more intricate methodologies. Bias-dependent contact and channel resistances studies, bias-dependent high-frequency performance studies and contact engineering studies are enhanced and evaluated by the extracted contact resistance values.
