学术文献库

Band bending at semiconductor surfaces induced by chemical doping or electric fields can create metallic surfaces with properties not found in the bulk, such as high electron mobility, magnetism or superconductivity. Optical generation of such metallic surfaces via BB on ultrafast timescales would facilitate a drastic manipulation of the conduction, magnetic and optical properties of semiconductors for high-speed electronics. Here, we demonstrate the ultrafast generation of a metal at the (10-10) surface of ZnO upon photoexcitation. Compared to hitherto known ultrafast photoinduced semiconductor-to-metal transitions that occur in the bulk of inorganic semiconductors, the metallization of the ZnO surface is launched by 3-4 orders of magnitude lower photon fluxes. Using time- and angle-resolved photoelectron spectroscopy, we show that the phase transition is caused by photoinduced downward surface band bending due to photodepletion of donor-type deep surface defects. At low photon flux, surface-confined excitons are formed. Above a critical exciton density, a Mott transition occurs, leading to a partially filled metallic band below the equilibrium Fermi energy. This process is in analogy to chemical doping of semiconductor surfaces. The discovered mechanism is not material-specific and presents a general route for controlling metallicity confined to semiconductor interfaces on ultrafast timescales.