论文标题
芯片上硅二氧化硅富含硅的热型特性
Thermo-Optic Properties of Silicon-Rich Silicon Nitride for On-chip Applications
论文作者
论文摘要
我们证明了使用等离子体增强化学蒸气沉积（PECVD）沉积的富含硅硅（SRN）膜的热光学特性。马赫 - 齐汉德干涉仪（MZIS）随温度函数的光谱响应的变化被用来表征具有变化的硅含量的硝酸硅膜的热光系数。硅含量与氮化硅膜中的热光系数之间存在明确的关系，可实现的系数最高为（1.65 +/- 0.08）x 10-4 k-1。此外，我们实现了基于SRN多模式干涉仪（MMI）的热线开关，具有超过20 dB的灭绝率和50 MW的两端口开关的总功耗。
We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder Interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65+/-0.08) x 10-4 K-1. Furthermore, we realize an SRN Multi-Mode Interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.
