论文标题
拓扑保护的间隙状态和封闭式三层石墨烯的共振
Topologically protected gap states and resonances in gated trilayer graphene
论文作者
论文摘要
封闭式的Trilayer石墨烯在其最稳定的ABC堆叠中表现出能量差距。在这里，我们表明，当堆叠顺序从ABC变为CBA时，每个山谷中出现了三个无间隙状态。各州受到拓扑保护，它们的数量与跨堆叠边界的山谷Chern号码的变化有关。堆叠变化是通过在顶部和底层中的波纹或分层来实现的，这些变化同时在相邻层（双层）成对的成对中产生了两个AB/BA堆叠域壁。反过来，这导致某些栅极电压在传导和价带连续图中还出现了两对拓扑共振。
Gated trilayer graphene exhibits energy gap in its most stable ABC stacking. Here we show that when the stacking order changes from ABC to CBA, three gapless states appear in each valley. The states are topologically protected and their number is related to the change of the valley Chern number across the stacking boundary. The stacking change is achieved by corrugation or delamination in the top and bottom layers, which simultaneously yields two AB/BA stacking domain walls in the pairs of adjacent layers (in bilayers). This in turn causes that for some gate voltages two pairs of topological resonances appear additionally in the conduction and valence band continua.
