论文标题
在欧盟的半学薄膜中相关的磁性结构和磁转移，$ _ {1-x} $
Correlating magnetic structure and magnetotransport in semimetal thin films of Eu$_{1-x}$Sm$_x$TiO$_3$
论文作者
论文摘要
我们报告了在双轴压力和掺杂电子兴奋剂的Eutio $ _3 $的薄膜样品中的平均和深度依赖磁顺序的演变，用于掺杂范围的样品$ <$ <$ 0.1至7.8 $ \ times 10^{20} $ cm $ cm $^{ - 3} $。在施加的平面内磁场下，G型抗铁磁基态经历了连续的自旋飞机相变至平面内偏置的铁磁性。铁磁性的临界场随着自由载体数量的增加而略有降低，但是在整个掺杂范围内，自旋流动过渡的场演变在质量上相似。出乎意料的是，我们观察到界面的铁磁磁性，在整个退化半导体膜的大部分铁磁饱和之前，在低场的底物界面处的饱和欧盟$^{2+} $矩。我们讨论了这些发现对该化合物不寻常的磁转移特性的含义。
We report on the evolution of the average and depth-dependent magnetic order in thin film samples of biaxially stressed and electron-doped EuTiO$_3$ for samples across a doping range $<$0.1 to 7.8 $\times 10^{20}$ cm$^{-3}$. Under an applied in-plane magnetic field, the G-type antiferromagnetic ground state undergoes a continuous spin-flop phase transition into in-plane, field-polarized ferromagnetism. The critical field for ferromagnetism slightly decreases with an increasing number of free carriers, yet the field evolution of the spin-flop transition is qualitatively similar across the doping range. Unexpectedly, we observe interfacial ferromagnetism with saturated Eu$^{2+}$ moments at the substrate interface at low fields preceding ferromagnetic saturation throughout the bulk of the degenerate semiconductor film. We discuss the implications of these findings for the unusual magnetotransport properties of this compound.
