论文标题
高度非线性和滞后电子设备的缺陷水平切换
Defect Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices
论文作者
论文摘要
从电路保护到下一代计算的应用需要非线性和障碍电气设备。用于电阻转换的广泛研究的设备基于大规模运输，例如离子在电场中的漂移以及集体现象，例如绝缘子 - 金属过渡。我们询问是否可以在黑暗中刺激许多半导体中已知的大型光电传入响应，并以设计电气设备来刺激。我们根据光电CD设计和测试设备，我们的结果与电阻转换的假设是一致的，即电阻转换是由深度和浅层配置之间切换的点缺陷引起的：缺陷级别开关（DLS）。这个新的电子设备设计原理 - 没有光子的光电传统 - 利用了数十年的光导不传统和缺陷光谱研究。它很容易概括，并可以实现新的非线性，滞后设备的合理设计。
Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can be stimulated in the dark and harnessed to design electrical devices. We design and test devices based on photoconductive CdS, and our results are consistent with the hypothesis that resistive switching arises from point defects that switch between deep- and shallow-donor configurations: defect level switching (DLS). This new electronic device design principle - photoconductivity without photons - leverages decades of research on photoconductivity and defect spectroscopy. It is easily generalized and will enable the rational design of new nonlinear, hysteretic devices for future electronics.
