论文标题
用于切换瞬变pr $ _ {0.7} $ ca $ _ {0.3} $ mno $ _3 $的电阻RAM
Reaction-Drift Model for Switching Transients in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$-Based Resistive RAM
论文作者
论文摘要
pr $ _ {0.7} $ ca $ _ {0.3} $ mno $ _3 $（PCMO）RRAM显示出有希望的内存属性，例如非挥发性，低变异性，多重阻力状态和可扩展性。从建模的角度来看，在技术计算机辅助设计（TCAD）中存在固定的氧气离子空位陷阱和自热（SH）的情况下，通过漂移扩散（DD）对PCMO RRAM的电荷直流电流建模（但是没有氧离子离子运输）能够解释实验实验的空间电荷有限的传感（sclC）的特征，以指示限制性的转换。此外，使用DD+SH模型的瞬态分析能够在电阻转换之前重现在〜100 ns时尺度的实验观察到的快速电流增加。但是，完整的定量瞬态电流传输加电阻开关模型需要包括离子传输。我们提出了与氧气空位相关的陷阱密度变化的反应档位（RD）模型，该模型与DD+SH模型结合使用。早些时候，我们已经表明，设置的瞬态由3个阶段组成，重置瞬态由实验中的4个阶段组成。在这项工作中，DD+SH+RD模型能够在10 ns -1 s范围内重现整个瞬态行为，用于针对不同应用偏见和环境温度的设置和重置操作。值得注意的是，log（i）是通用的重置实验行为，与（m x log（t））成正比，其中M〜-1/10在模拟中重现。该模型是PCMO RRAMS显着再现瞬态集/复位行为的第一个模型。该模型确定了这些RRAM中的主要物理现象的自热和离子饮用有限的电阻转换。
Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling perspective, the charge carrier DC current modeling of PCMO RRAM by drift diffusion (DD) in the presence of fixed oxygen ion vacancy traps and self-heating (SH) in Technology Computer Aided Design (TCAD) (but without oxygen ionic transport) was able to explain the experimentally observed space charge limited conduction (SCLC) characteristics, prior to resistive switching. Further, transient analysis using DD+SH model was able to reproduce the experimentally observed fast current increase at ~100 ns timescale, prior to resistive switching. However, a complete quantitative transient current transport plus resistive switching model requires the inclusion of ionic transport. We propose a Reaction-Drift (RD) model for oxygen ion vacancy related trap density variation, which is combined with the DD+SH model. Earlier we have shown that the Set transient consists of 3 stages and Reset transient consists of 4 stages experimentally. In this work, the DD+SH+RD model is able to reproduce the entire transient behavior over 10 ns - 1 s range in timescale for both the Set and Reset operations for different applied biases and ambient temperatures. Remarkably, a universal Reset experimental behavior, log(I) is proportional to (m X log(t)) where m~-1/10 is reproduced in simulations. This model is the first model for PCMO RRAMs to significantly reproduce transient Set/Reset behavior. This model establishes the presence of self-heating and ionic-drift limited resistive switching as primary physical phenomena in these RRAMs.
