论文标题
六角硼硼化硼的扭曲双层石墨烯的带结构
Band structure of twisted bilayer graphene on hexagonal boron nitride
论文作者
论文摘要
研究了与扭曲的双层石墨烯（TBG）对齐的六角硼（HBN）层的影响。在扭曲的双层石墨烯和HBN之间的足够低角度，$θ_{hbn} \ sillsim 2^\ circ $，石墨烯电子结构受到强烈干扰。状态密度低的能量峰的宽度从$ W \ Sim 5-10 $ MEV变化为解耦系统的$ \ sim 20-30 $ MEV。由于范霍夫奇异性而导致的状态密度的尖峰被平滑了。我们发现，对于TBG中的扭曲角度以及HBN和石墨烯层之间的旋转角度的现实组合，可以使用单个Moiré单位电池来描述系统。
The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $θ_{hBN} \lesssim 2^\circ$, the graphene electronic structure is strongly disturbed. The width of the low energy peak in the density of states changes from $W \sim 5 - 10$ meV for a decoupled system to $\sim 20 - 30$ meV. Spikes in the density of states due to van Hove singularities are smoothed out. We find that for a realistic combination of the twist angle in the TBG and the twist angle between the hBN and the graphene layer the system can be described using a single moiré unit cell.
