论文标题
电子和质子辐照对空间光伏的SIC钝的P型GE晶片中少数载体寿命的效果
Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics
论文作者
论文摘要
我们报告了电子和质子照射对有效的少数载体寿命（$τ_{eff} $）对P型Ge Wafers的影响。使用微波检测的光电衰减（$μ$ W-PCD）方法评估少数载体寿命。我们检查了$τ_{eff} $对P型掺杂水平以及1 MeV处的电子和质子辐射流量的依赖性。辐照之前和之后测得的$τ_{eff} $用于估计少数载体扩散长度，这是太阳能电池操作的重要参数。我们观察到$τ_{eff} $在1e17和1e16 at.cm $^{ - 3} $之间的GE掺杂水平的50至230 $ $ n不等，对应于500-1400 $ $ m的扩散长度。 $τ_{eff} $在GE散装寿命和表面重组速度中的分离是通过照射不同厚度的GE寿命样本来进行的。根据文献讨论了可能的辐射引起的缺陷。
We report on the effect of electron and proton irradiation on effective minority carrier lifetimes ($τ_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay ($μ$W-PCD) method. We examine the dependence of $τ_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured $τ_{eff}$ before and after irradiation are used to estimate the minority carriers diffusion lengths, which is an important parameter for solar cell operation. We observe $τ_{eff}$ ranging from 50 to 230 $μ$s for Ge doping levels between 1E17 and 1E16 at.cm$^{-3}$, corresponding to diffusion lengths of 500-1400 $μ$m. A separation of $τ_{eff}$ in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.
