论文标题
分析和设计注意事项，以实现MMWave振荡器中使用芯片内存的基本噪声的基本限制
Analysis and Design Considerations for Achieving the Fundamental Limits of Phase Noise in mmWave Oscillators with On-Chip MEMS Resonator
论文作者
论文摘要
微电动机电系统（MEMS）或声音谐振器中非常小的机电耦合系数非常关注振荡器性能，特别是在MMWave频率下。这种小系数是谐振器中运动电容与静电电容的小比例的表现。这项工作提供了一种通用解决方案，以克服MMWAVE频率下静态电容相对较高的问题，并提出了分析和设计技术，以实现极低的相位噪声以及在基于芯片MEMS的MEMS共振器基于MMMWAVE振荡器中的非常低相位噪声（FOM）。通过设计和模拟30 GHz振荡器的MEMS谐振器，在14 nm GF技术的质量系数中，通过设计和仿真进行了验证。布局仿真结果表明，它在1 MHz的抵消时达到了-132 dbc/hz的相位噪声为217 dbc/hz。
Very small electromechanical coupling coefficient in micro-electromechanical systems (MEMS) or acoustic resonators is quite of a concern for oscillator performance, specially at mmWave frequencies. This small coefficient is the manifestation of the small ratio of motional capacitance to static capacitance in the resonators. This work provides a general solution to overcome the problem of relatively high static capacitance at mmWave frequencies and presents analysis and design techniques for achieving extremely low phase noise and a very high figure-of-merit (FoM) in an on-chip MEMS resonator based mmWave oscillator. The proposed analysis and techniques are validated with design and simulation of a 30 GHz oscillator with MEMS resonator having quality factor of 10,000 in 14 nm GF technology. Post layout simulation results show that it achieves a phase noise of -132 dBc/Hz and FoM of 217 dBc/Hz at offset of 1 MHz.
