论文标题
过渡金属氮化金属薄膜沉积在CMOS兼容温度下，可调光电和等离子设备
Transition metal nitride thin films deposited at CMOS compatible temperatures for tunable optoelectronic and plasmonic devices
论文作者
论文摘要
过渡金属氮化物已在等离子和光电设备中使用了极大的兴趣。然而，沉积温度仍然是CMOS制造过程中过渡金属氮化金属作为等离子体材料的整合的重要障碍。基于钛和硝化氮化物的二元，三元和分层过渡金属氮化金属薄膜使用高功率脉冲磁控溅射（HIPIMS）沉积。在HIPIMS过程中达到的血浆密度增加，使高质量的等离子薄膜可以在CMOS兼容温度小于300°C下沉积。薄膜沉积在一系列与工业相关的基板上，并在紫外线中显示可调的血浆频率到可见的光谱范围。薄膜质量以及沉积过程的可扩展性结合在一起，表明氮化物膜的Hipims沉积是一种工业可行的技术，可以为制造下一代等离子和光电设备铺平道路。
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic materials within CMOS fabrication processes. Binary, ternary and layered transition metal nitride thin films based on titanium and niobium nitride are deposited using High Power Impulse Magnetron Sputtering (HIPIMS). The increased plasma densities achieved in the HIPIMS process allow high quality plasmonic thin films to be deposited at CMOS compatible temperatures of less than 300°C. Thin films are deposited on a range of industrially relevant substrates and display tunable plasma frequencies in the ultraviolet to visible spectral ranges. The thin film quality, combined with the scalability of the deposition process, indicates that HIPIMS deposition of nitride films is an industrially viable technique and can pave the way towards the fabrication of next generation plasmonic and optoelectronic devices.
