论文标题
二维铁电alpha-In2se3中平面外场效应的正交电气控制
Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3
论文作者
论文摘要
调整晶体固体的电特性是材料科学和电子产品的核心。通过外部电压生成电场效应是一种干净，连续和系统的方法。在这里，利用范德华（VDW）中独特的电偶极锁定，我们报告了一种新的方法来建立电控效果，其中在平面外方向上静电掺杂并由平面内电压诱导和控制。使用超薄alpha-IN2SE3和MOS2的垂直VDW异质结构，我们验证了平面电压门控的Coplanar场效果晶体管（CP-FET），具有划分的和保留式的ON/OFF/OFT/OFF/OFT/OFF/OFT/OFF/OFT/OFF。我们的结果表明，铁电性的前所未有的电控制，这为将二维（2D）铁电的融合到新型纳米电信设备中的方式铺平了道路。
Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.
