论文标题

压力诱导的lifshitz thfeasn

Pressure induced Lifshitz transition in ThFeAsN

论文作者

Sen, Smritijit, Guo, Guang-Yu

论文摘要

在本文中,我们提出了依赖压力的结构参数和thfeasn超导体的电子结构。在结构参数中没有异常以及具有静水压力的弹性常数,这与实验一致。我们根据状态,带结构和费米表面的密度在不同的外部压力下研究该化合物的电子结构。来自FEMI水平的状态密度,来自Fe-D轨道的趋势与超导过渡温度(T $ _C $)的趋势相同。我们还观察到了Thfeasn化合物中压力诱导的轨道选择性LIFSHITTITION,这与在基于Fe的基于FE的超导体家族中观察到的LIFSHITZ过渡截然不同。 $γ$点的特殊孔(如费米表面)的费米表面会随着压力而发生重大变化。用压力对费米表面拓扑的这种修饰似乎在减少T $ _C $的主要作用中起着主要作用,而压力在Thfeasn超导体中。自旋轨道耦合不会影响Lifshitz的过渡,但它会在较高压力下修改频段接近$γ$点的能量排序。

In this paper, we present pressure dependent structural parameters and electronic structure of ThFeAsN superconductor. There are no anomalies in the structural parameters as well as elastic constants with hydrostatic pressure which is consistent with the experiments. We study the electronic structure of this compound at different external pressures in terms of density of states, band structure and Fermi surface. Density of states at the Fermi level, coming from Fe-d orbitals follows the same trend as that of the superconducting transition temperature (T$_c$) as a function of hydrostatic pressure. We also observe a pressure induced orbital selective Lifshitz transition in ThFeAsN compound which is quite different from the Lifshitz transitions observed in the other families of Fe-based superconductors. Fermi surfaces of ThFeAsN specially hole like Fermi surfaces at $Γ$ point are altered significantly with pressure. This modification of Fermi surface topology with pressure seems to play the major role in the reduction of T$_c$ with pressure in ThFeAsN superconductor. Spin-orbit coupling does not affect the Lifshitz transition but it modifies the energy ordering of bands near $Γ$ point at higher pressure.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源