论文标题
MBN Explorer原子体模拟的855 MEV电子传播和辐射发射的定向硅弯曲晶体：理论与实验
MBN Explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment
论文作者
论文摘要
相对论分子动力学的方法用于对弯曲硅（111）晶体中855 MeV电子的通道现象的准确计算模型和数值分析。在晶体旋转过程中，特别注意从轴向通道状态到平面一号的过渡。详细分析了电子的挠度分布和发射的辐射的光谱分布。将计算结果与在Mainzer Mictrotron（MAMI）设施中收集的实验数据进行了比较。
The method of relativistic molecular dynamics is applied for accurate computational modelling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to the transition from the axial channelling regime to the planar one in the course of the crystal rotation with respect to the incident beam. Distribution in the deflection angle of electrons and spectral distribution of the radiation emitted are analysed in detail. The results of calculations are compared with the experimental data collected at the MAinzer MIctrotron (MAMI) facility.
