论文标题
使用单层集成的等离子材料增强的室温红外LED
Enhanced Room Temperature Infrared LEDs using Monolithically Integrated Plasmonic Materials
论文作者
论文摘要
最近，使用半导体光电设备和具有Epsilon-near-Zero（ENZ）和负介电常数的等离子材料和等离子体材料的聚石整合据报道了出色的系统。在传统的Noble金属中，ENZ和等离子响应是在血浆频率附近实现的，从而限制了等离子光电设备设计灵活性。在这里，我们利用了一种全外行方法来单层和无缝将设计器的等离激元材料整合到发射二极管（LED）中，从而在其他相同的非质量控制样品上增强了〜5.6 x。设备表现出与市售设备相当的光功能和温度性能远远优越。
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode (LED), leading to a ~5.6 x enhancement over an otherwise identical non-plasmonic control sample. Devices exhibited optical powers comparable, and temperature performance far superior, to commercially-available devices.
