论文标题
通过直接粘合在高真空中制造的扭曲双层石墨烯
Twisted bilayer graphene fabricated by direct bonding in a high vacuum
论文作者
论文摘要
扭曲的双层石墨烯（TBG），其中两个单层石墨烯以平面旋转角堆叠，由于独特的电子结构，最近已成为一个热门话题。 TBG通常是通过机械去角质和转移石墨烯薄片的撕裂和堆栈方法在空气中产生的，该方法很难获得相当大的毫米级别，并且很难获得层之间的重要清洁界面。在这项研究中，我们通过直接在高真空中直接将SIC底物上的易于脱落的CVD生长石墨烯转移到石墨烯的情况下解决了这些问题，而无需使用任何辅助转移介质和观察到的电子带调制，这是由于强层间层间耦合而引起的。
Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.
