论文标题
Ti-Doped Bi $ _2 $ SE $ _3 $的准备,表征和电子结构
Preparation, Characterization and electronic structure of Ti-doped Bi$_2$Se$_3$
论文作者
论文摘要
我们报告了使用Bridgeman Technique的BI $ _2 $ SE $ _3 $的高质量单晶的准备。用X射线衍射(XRD)表征制备的单晶,以检查X射线的晶体结构和能量分散分析以进行组成分析。 Ti掺杂化合物的XRD数据表明,相对于普通BI $ _2 $ SE $ _3 $,指示晶格参数的变化,而结构类型保持不变;这也确定了TI进入预期的替代站点。上述所有分析都使用Bridgman技术建立了这些晶体的成功制备。我们进行了X射线光发射光谱,以研究核心水平光谱研究组合物。 BI $ _2 $ SE $ _3 $ SPECTRA在核心水平和缺乏杂质特征的敏锐和独特的特征上。 Ti掺杂样品的核心水平光谱由于Ti核心水平而显示出明显的信号。光谱特征的分析揭示了等离子体激发和最终状态卫星的签名;电子结构中有限电子相关效应的签名。
We report the preparation of high-quality single crystal of Bi$_2$Se$_3$, a well-known topological insulator and its Ti-doped compositions using Bridgeman technique. Prepared single crystals were characterized by x-ray diffraction (XRD) to check the crystalline structure and energy dispersive analysis of x-rays for composition analysis. The XRD data of Ti-doped compounds show a small shift with respect to normal Bi$_2$Se$_3$ indicating changes in the lattice parameters while the structure type remained unchanged; this also establishes that Ti goes to the intended substitution sites. All the above analysis establishes successful preparation of these crystals with high quality using Bridgman technique. We carried out x-ray photo-emission spectroscopy to study the composition via investigating the core level spectra. Bi$_2$Se$_3$ spectra exhibit sharp and distinct features for the core levels and absence of impurity features. The core level spectra of the Ti-doped sample exhibit distinct signal due to Ti core levels. The analysis of the spectral features reveal signature of plasmon excitation and final state satellites; a signature of finite electron correlation effect in the electronic structure.