论文标题
退火期间的表面转移掺杂和紫外线可以改善钻石中的浅植入氮气呈中心吗？
Can surface-transfer doping and UV irradiation during annealing improve shallow implanted Nitrogen-Vacancy centers in diamond?
论文作者
论文摘要
据报道，如果在植入后的退火步骤中提高或降低了费米水平，则离子植入NV中心的转化率和相干时间会有所改善。在这里，我们研究表面转移掺杂和表面充电是否可以利用诱导这种作用。我们分析了由离子植入和退火产生的NV中心的相干时间和产量，在退火过程中采用了各种条件。具体而言，我们研究了用镍，钯或氧化铝制钻石的涂层，以诱导正面转移掺杂，并在紫外线照明下退火以触发空缺充电。金属涂层的钻石的地层产量比其他样品高两倍。在调查的样品之间，相干时间$ T_2 $的变化不到不到两个因素。这两种效果都比以前的报告弱，这表明对频带结构进行更强的修改是找到明显效应的必要条件。紫外线照射对收益率没有影响，$ t_2 $ times。
It has been reported that conversion yield and coherence time of ion-implanted NV centers improve if the Fermi level is raised or lowered during the annealing step following implantation. Here we investigate whether surface transfer doping and surface charging, by UV light, can be harnessed to induce this effect. We analyze the coherence times and the yield of NV centers created by ion implantation and annealing, applying various conditions during annealing. Specifically, we study coating the diamond with nickel, palladium or aluminum oxide, to induce positive surface transfer doping, as well as annealing under UV illumination to trigger vacancy charging. The metal coated diamonds display a two times higher formation yield than the other samples. The coherence time $T_2$ varies by less than a factor of two between the investigated samples. Both effects are weaker than previous reports, suggesting that stronger modifications of the band structure are necessary to find a pronounced effect. UV irradiation has no effect on yield and $T_2$ times.
