论文标题
在半绝缘GAAS上进行高迁移率 - 金属氧化物界面
High mobility conducting channel at semi-insulating GaAs -- metal oxide interfaces
论文作者
论文摘要
GAAS钝化的有效技术的缺乏限制了在现代电子中使用III-V半导体。这里报告的效果可能会导致解决这个长期存在的问题的解决方案。我们发现，当绝缘金属氧化物电介质通过在氩/氧血浆中的反应性RF溅射沉积在未处理的半绝缘GAAS晶圆上时，会形成电气传导的界面通道。导电通道为N型，表面电荷密度为10^7至10^10 cm^-2，HALL迁移率高达6000 cm^2/vsec，具体取决于沉积过程中RF血浆激发能力和氧含量。通过沉积任何测试过的金属氧化物电介质：MGO，SIO2，AL2O3和HFO2来形成导电通道。
Absence of an efficient technology of GaAs passivation limits the use of III-V semiconductors in modern electronics. The effect reported here can possibly lead to a solution of this long standing problem. We found that an electrically conducting interfacial channel is formed when insulating metal oxide dielectrics are deposited on untreated semi-insulating GaAs wafers by reactive RF sputtering in argon/oxygen plasma. The conducting channel is n-type with the surface charge density of 10^7 to 10^10 cm^-2 and Hall mobility as high as 6000 cm^2/Vsec, depending on the RF plasma excitation power and oxygen content during the deposition. The conducting channel is formed by depositing any of the tested metal oxide dielectrics: MgO, SiO2, Al2O3 and HfO2.
