论文标题
MOCVD种植（010）$β$ -GA $ _ {2} $ o $ $ $ _ {3} $的探测费运输和背景掺杂（010）
Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$
论文作者
论文摘要
一个新的创纪录的室温电子大厅的活动能力（$μ__{rt} = 194 \ space cm^{2}/v \ space s $在$ n \ sim 8 \ sim 8 \ sim 10^{15} \ space cm^{ - 3} $中，$β$ -GA2O3在无意识的薄膜中显示为$β$ -GA2O3金属有机化学蒸气沉积（MOCVD）。 $ \ sim 9500 \ space cm^{2}/v \空间S $的峰值电子迁移率在45 K处实现。进一步研究运输特性，表明在Epi-layer/sistrate界面附近存在板电荷。 Si被确定为ePi层和界面中背景载体的主要贡献者，源自表面污染和生长环境。底物的生长前氢酸清洁导致界面和epi层中的Si杂质明显降低。另外，研究了MOCVD生长条件，尤其是腔室压力对SI杂质掺入的影响。背景电荷浓度与MOCVD生长压力之间存在正相关。值得注意的是，在$β$ -GA2O3薄膜中，散装电荷浓度非常低，即使较低的板电荷密度也可以在电荷传输属性中发挥重要作用。
A new record-high room temperature electron Hall mobility ($μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for $β$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investigation on the transport properties indicate the existence of sheet charges near the epi-layer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epi-layer and the interface, originated from both surface contamination as well as growth environment. Pre-growth hydrofluoric acid cleaning of the substrate lead to an obvious decrease of Si impurity both at interface and in epi-layer. In addition, the effect of MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a $β$-Ga2O3 film with very low bulk charge concentration, even a reduced sheet charge density can play an important role in the charge transport properties.
