论文标题
在范德华巡回磁铁
Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet
论文作者
论文摘要
抗铁磁（AFM）Van der Waals（VDW）材料为合成AFM Spintronics提供了一个新型的平台，其中与自旋相关的功能来自操纵层之间的自旋构型。金属VDW抗铁磁铁预计在切换和检测通过电流的旋转状态方面具有多个优势，但由于缺乏合适的材料，探索量的优势较低。在这里，利用VDW Interamayer磁性对材料组成的极端敏感性，我们报告了具有TN〜210 K的共掺杂Fe4Gete2中巡回的抗firomagnetism，与其他已知的AFM VDW金属相比，数量级增加了。所得的自旋构型和方向通过掺杂，磁场，温度和厚度来敏感地控制，这些旋转构型和厚度通过电导有效地读出。这些发现表现出具有可调层交换相互作用和磁各向异性的金属VDW磁铁的良好优点，适用于AFM Spintronic应用。
Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrical currents but have been much less explored due to the lack of suitable materials. Here, utilizing the extreme sensitivity of the vdW interlayer magnetism to material composition, we report the itinerant antiferromagnetism in Co-doped Fe4GeTe2 with TN ~ 210 K, an order of magnitude increased as compared to other known AFM vdW metals. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, temperature, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets with tunable interlayer exchange interaction and magnetic anisotropy, suitable for AFM spintronic applications.
