论文标题
使用船长CCD对FANO因子的绝对测量
Absolute measurement of the Fano factor using a Skipper-CCD
论文作者
论文摘要
船长CCD可以实现深度子电子读数噪声，从而可以绝对确定从0到1900电子以上的较大范围内的离子化电子数量的绝对确定。在这项工作中，我们提出了一种新型技术，该技术利用了这种独特的能力来允许自校准和硅特性的最终确定。我们对差异进行了绝对测量，以及由$^{55} $ fe X射线产生的电荷分布的平均值，在123K和5.9 KEV中获得SI的FANO因子绝对测量。发现了0.119 $ \ pm $ 0.002的值，并且确定电子孔对创建能量为（3.749 $ \ pm $ 0.001）EV。这项技术为低能能以直接测量FANO因子打开了机会。
Skipper-CCD can achieve deep sub-electron readout noise making possible the absolute determination of the exact number of ionized electrons in a large range, from 0 to above 1900 electrons. In this work we present a novel technique that exploits this unique capability to allow self-calibration and the ultimate determination of silicon properties. We performed an absolute measurement of the variance and the mean number of the charge distribution produced by $^{55}$Fe X-rays, getting a Fano factor absolute measurement in Si at 123K and 5.9 keV. A value of 0.119 $\pm$ 0.002 was found and the electron-hole pair creation energy was determined to be (3.749 $\pm$ 0.001) eV. This technology opens the opportunity for direct measurements of the Fano factor at low energies.
