论文标题
反应溅射的硝化镍薄膜的研究
Study of Reactively Sputtered Nickel Nitride Thin Films
论文作者
论文摘要
使用N2的不同部分流（RN2），使用反应性磁控溅射过程沉积硝酸盐（Ni-N）薄膜样品。它们是使用X射线反射率（XRR），X射线衍射（XRD）和X射线吸收来表征的。从XRR测量值中，我们发现，由于RN2的依次进展，Ni-N膜的沉积速率和密度降低，这表明Ni-N合金和化合物在Ni靶表面以及薄膜样品中也形成。从XRD测量获得的晶体结构表明：Ni，Ni（n），Ni4n，Ni3n和Ni2n的不同Ni-N化合物的演变，RN2逐渐上升。与XRD结果一致，XANES测量进一步证实了这些阶段。进行了极化的中子反射率测量以探测磁化强度，即使n掺入量超过％以上，ni-n薄膜也会变得非磁性。 Ni-N样品的总体生长行为已与众所周知的Fe-N和Co-N系统的生长行为进行了比较，从而产生了相似性和差异。
Nickel nitride (Ni-N) thin film samples were deposited using reactive magnetron sputtering process utilizing different partial flow of N2 (RN2). They were characterized using x-ray reflectivity (XRR), x-ray diffraction (XRD) and x-ray absorption near edge spectroscopy (XANES) taken at N K-edge and Ni L-edges. From XRR measurements, we find that the deposition rate and the density of Ni-N films decrease due to successively progression in RN2, signifying that Ni-N alloys and compounds are forming both at Ni target surface and also within the thin film samples. The crystal structure obtained from XRD measurements suggest an evolution of different Ni-N compounds given by: Ni, Ni(N), Ni4N, Ni3N, and Ni2N with a gradual rise in RN2. XANES measurements further confirm these phases, in agreement with XRD results. Polarized neutron reflectivity measurements were performed to probe the magnetization, and it was found Ni-N thin films become non-magnetic even when N incorporation increases beyond few at%. Overall growth behavior of Ni-N samples has been compared with that of rather well-known Fe-N and Co-N systems, yielding similarities and differences among them.
