论文标题
旋转双双层石墨烯中的栅极可调分数Chern绝缘子
Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene
论文作者
论文摘要
我们预测，扭曲的双重层石墨烯将是一个多功能平台，用于通过调谐栅极电位和扭角来实现分数Chern绝缘子。值得注意的是，这些物质的拓扑状态，包括旋转单线Halperin状态和Chern Number中的旋转极化状态$ \ MATHCAL C = 1 $和$ \ MATHCAL {C} = 2 $频段，在高温下发生，而无需外部磁场。
We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number $\mathcal C=1$ and $\mathcal{C}= 2$ bands, occur at high temperatures and without the need for an external magnetic field.
