论文标题
在运行高达100 K的SI上注入电气注射的GESN激光器
Electrically injected GeSn lasers on Si operating up to 100 K
论文作者
论文摘要
GESN材料开发的重大进展使得可以在SI平台上单层整合激光的可行解决方案。尽管有许多关注光学泵送激光器的报道，但尚未通过实验实现通过电气注射的GESN激光器。在这项工作中，我们报告了SI上电气注射的GESN激光器的首次演示。在Si底物上生长的GESN/Sigesn异质结构二极管二极管被制造成脊指导激光器设备，并在脉冲条件下进行了测试。对结构设计进行了特殊考虑，以确保有效的载体限制和导致激光的光学限制。在10至100 k的温度下观察到激光，发射峰约为2300 nm。在10 K处记录了598 A/CM2的最小阈值，阈值在77 K时增加到842 A/CM2。单个峰的光谱线宽的测量值小至0.13 nm（0.06 MeV）。在10-77 K的温度范围内提取最大特性温度为99K。
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si. A GeSn/SiGeSn heterostructure diode grown on a Si substrate was fabricated into ridge waveguide laser devices and tested under pulsed conditions. Special considerations were given for the structure design to ensure effective carrier confinement and optical confinement that lead to lasing. Lasing was observed at temperatures from 10 to 100 K with emission peaks at around 2300 nm. The minimum threshold of 598 A/cm2 was recorded at 10 K and the threshold increased to 842 A/cm2 at 77 K. The spectral linewidth of a single peak was measured as small as 0.13 nm (0.06 meV). The maximum characteristic temperature was extracted as 99 K over the temperature range of 10-77 K.
