论文标题
硅上的四烯超薄膜生长
Tetracene ultrathin film growth on silicon
论文作者
论文摘要
无机有机界面对于通过单线激子裂变(SF)提高基于硅太阳能电池的功率转化效率很重要。我们阐明了第一批四苯烯(TC),一种SF分子的结构,在氢化的SI(111)[H-SI(111)]和氢化的无定形SI(A-SI:H)结构,通过结合近乎边缘的X射线X射线吸收量(Nexafs)和X-Ray spectory(Nexafs)和X-Ray spectrose(x-ray spectrosigy(x) (DFT)计算。对于在265 K的底物温度下生长或以下的样品,所得的超薄TC膜以几乎直立的分子为主。分子排列与TC散装相非常相似,在77°左右的共轭分子平面正常($α$)之间的平均角度仅略高。从碳K边缘X射线吸收光谱进行判断,当在H-SI(111)和A-SI:H底物以及(sub)单层覆盖物上生长时,TC分子的方向几乎相同。然而,将退火升级为室温,将薄膜结构更改为较小的$α$约为63°。详细的DFT辅助分析表明,这种结构过渡与较低的堆积密度相关,并且需要精心挑选的热能量。因此,我们将所得结构归因于独特的单层构型,该结构具有较少但仍然有序的分子。与底物波形的重叠更大,使这种布置吸引了SF辅助硅太阳能电池中优化的界面电子转移。
Inorganic-organic interfaces are important for enhancing the power conversion efficiency of silicon-based solar cells through singlet exciton fission (SF). We elucidated the structure of the first monolayers of tetracene (Tc), a SF molecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphous Si (a-Si:H) by combining near-edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) experiments with density functional theory (DFT) calculations. For samples grown at or below substrate temperatures of 265 K, the resulting ultrathin Tc films are dominated by almost upright-standing molecules. The molecular arrangement is very similar to the Tc bulk phase, with only slightly higher average angle between the conjugated molecular plane normal and the surface normal ($α$) around 77°. Judging from carbon K-edge X-ray absorption spectra, the orientation of the Tc molecules are almost identical when grown on H-Si(111) and a-Si:H substrates as well as for (sub)mono- to several-monolayer coverages. Annealing to room temperature, however, changes the film structure towards a smaller $α$ of about 63°. A detailed DFT-assisted analysis suggests that this structural transition is correlated with a lower packing density and requires a well-chosen amount of thermal energy. Therefore, we attribute the resulting structure to a distinct monolayer configuration that features less inclined, but still well-ordered molecules. The larger overlap with the substrate wavefunctions makes this arrangement attractive for an optimized interfacial electron transfer in SF-assisted silicon solar cells.