论文标题
通过氮空位中心探测的散装化学蒸气 - 沉积生长的钻石中的深色缺陷电荷动力学
Dark defect charge dynamics in bulk chemical-vapor-deposition-grown diamonds probed via nitrogen vacancy centers
论文作者
论文摘要
尽管化学蒸气沉积（CVD）是合成钻石晶体的首选途径之一，但对生长过程中产生的点缺陷的充分了解仍然不完整。在这里，我们利用1B型CVD钻石中氮胶囊（NV）中心的电荷和自旋特性来暴露光学和磁性暗点缺陷，迄今为止，尽管有很多可比（如果不大于）替代氮的含量。尽管缺陷的显微镜结构和组成仍然难以捉摸，但间接检测的光亮光光谱表明供体状态在价带上方1.6 eV。我们的结果可能与依赖CVD生长的单晶钻石的一组应用程序相关。
Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen-vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance comparable to (if not greater than) that of substitutional nitrogen. Indirectly-detected photo-luminescence spectroscopy indicates a donor state 1.6 eV above the valence band, although the defect's microscopic structure and composition remain elusive. Our results may prove relevant to the growing set of applications that rely on CVD-grown single crystal diamond.
