论文标题
通过He Atom散射确定的金属底物上的单层石墨烯的电子偶联常数
The Electron-Phonon Coupling Constant for Single-Layer Graphene on Metal Substrates Determined from He Atom Scattering
论文作者
论文摘要
最近的理论表明，可以直接从氦原子散射反射率的热衰减（Debye-Waller因子）中提取电子偶联强度$λ$的值$λ$。该理论在这里扩展到Multivalley半学系统，并应用于不同金属底物和石墨的石墨烯。结果表明，$λ$迅速增加，以降低石墨烯 - 基底结合强度。考虑了两个不同的计算模型，这些模型在$λ$对结合强度的依赖性上产生了相似的结果。这些模型分别预测了$λ_{} = 0.89 $和0.32的值，对于具有环状边界条件的假设扁平独立的单层石墨烯。该方法不仅适用于此处考虑的石墨烯叠加仪的分析和表征，还适用于其他分层系统，例如扭曲的石墨烯双层。
Recent theory has demonstrated that the value of the electron-phonon coupling strength $λ$ can be extracted directly from the thermal attenuation (Debye-Waller factor) of Helium atom scattering reflectivity. This theory is here extended to multivalley semimetal systems and applied to the case of graphene on different metal substrates and graphite. It is shown that $λ$ rapidly increases for decreasing graphene-substrate binding strength. Two different calculational models are considered which produce qualitatively similar results for the dependence of $λ$ on binding strength. These models predict, respectively, values of $λ_{HAS} = 0.89$ and 0.32 for a hypothetical flat free-standing single-layer graphene with cyclic boundary conditions. The method is suitable for analysis and characterization of not only the graphene overlayers considered here, but also other layered systems such as twisted graphene bilayers.
