论文标题
在杂交三维拓扑绝缘子中的拓扑相变
Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator
论文作者
论文摘要
随着三维(3D)拓扑绝缘子(TI)的厚度与表面状态的渗透深度相当,因此表面之间的量子隧穿使他们的无间隙狄拉克电子结构变成了散布的表面状态。分析公式表明,杂交间隙尺度指数级,层数减少,而系统在拓扑上琐碎和非平凡的绝缘子之间振荡。这项工作探讨了3D Ti在表面杂交方案中的传输特性。通过使用三种不同方法,通过实验探测杂交差距是BISBTESE2厚度的函数,我们将交叉从3D状态映射到2D状态。在2D拓扑状态下,当Fermi水平在表面间隙内对齐时,我们观察到一个有限的纵向电导在〜2e2/h处,表明量子旋转大厅(QSH)状态。此外,我们研究了由外部磁场和电场调节的微不足道和非平凡杂交的状态的响应。我们对表面隔离和/或重新开放特征的启示强烈表明杂交间隙式策略中的拓扑相变(TPTS),从而实现了带绝缘和QSH状态之间具有巨大应用潜力的磁/电场切换的磁/电场。
As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped surface state. Analytical formulation suggests that the hybridization gap scales exponentially with decrease in number of layers while the system oscillates between topologically trivial and non-trivial insulators. This work explores the transport properties of a 3D TI in the inter-surface hybridization regime. By experimentally probing the hybridization gap as a function of BiSbTeSe2 thickness using three different methods, we map the crossover from the 3D to 2D state. In the 2D topological state, we observe a finite longitudinal conductance at ~2e2/h when the Fermi level is aligned within the surface gap, indicating a quantum spin Hall (QSH) state. Additionally, we study the response of trivial and non-trivial hybridization gapped states modulated by external out-of-plane magnetic and electric fields. Our revelations of surface gap-closing and/or reopening features are strongly indicative of topological phase transitions (TPTs) in the hybridization gap regime, realizing magnetic/electric field switching between band insulating and QSH states with immense potential for practical applications.