论文标题
SIO $ _2 $ -GEO $ _2 $多层的原子层沉积
Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers
论文作者
论文摘要
尽管对CMOS应用的兴趣，但Geo $ _ {2} $薄膜本身或与Sio $ _ {2} $结合的原子层沉积（ALD）尚未得到广泛研究。在这里，我们报告了Sio $ _ {2} $/geo $ _ {2} $多层硅基质上的ALD增长，使用远距离未报告的GE Propursor。具有各种周期性的多层的表征揭示了通过电子密度对比和化学混合的不存在的逐层生长，直至2个原子层的周期性。
Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.
