论文标题
原位研究被像差校正的电子束光刻对悬浮石墨烯设备的电子传输的影响
In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
论文作者
论文摘要
在200 KEV扫描透射电子显微镜（STEM）中实施了被像差校正的电子束光刻（AC-EBL）是一种新型技术，可用于基于具有单纳米临界尺寸的2D原子晶体制造量子设备，从而可以观察到更多的稳健量子效应。在这项工作中，我们研究了使用AC-EBL在悬浮石墨烯场效应晶体管上雕刻纳米结构的电子光束，重点是现场表征电子束暴露对设备电子传输质量的影响。当在石墨烯通道（局部暴露）或石墨烯通道（非本地暴露）的外部附近进行AC-EBL时，由于电荷掺杂和散射，石墨烯的电荷传输特性可能会受到重大影响。尽管可以通过剧烈退火可以在很大程度上消除非本地暴露的有害作用，但局部暴露诱发的损害是不可逆的，不能通过退火来固定。我们讨论观察到的暴露效应的可能原因。我们的结果为纳米材料装置制造的高能电子束光刻的未来开发提供了指导。
The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.
