论文标题
单层MOS中金属接触的电子辐照$ _2 $野外效应晶体管
Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors
论文作者
论文摘要
这项工作涉及单层钼二硫化物（MOS $ _2 $）现场效应晶体管（FET）中Schottky金属接触的电子束照射。我们表明，Ti/Au源/排水的暴露导致电子束改善晶体管电导。我们模拟设备中电子的路径，并表明大多数梁能量都在金属触点中吸收。因此，我们提出晶体管电流增强是由于热诱导的界面反应引起的，从而降低了接触式雪花屏障。我们还表明，触点的电子光束条件是永久性的，而通道的照射可以产生瞬态效应。
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.
