论文标题
多肉毒co/pb zr $ _ {0.2} $ ti $ _ {0.8} $ o $ $ _ {3} $接口处
Perovskite-type cobalt oxide at the multiferroic Co/Pb Zr$_{0.2}$Ti$_{0.8}$O$_{3}$ interface
论文作者
论文摘要
基本元素由两个由绝缘非磁性屏障隔开的铁磁电极组成的磁性隧道连接已被深入研究并用于非挥发性旋转式自旋装置。由于自旋电子电子的弹道隧道敏感地取决于化学成分和铅/屏障接口的原子几何形状，因此适当的设计是实现设备所需功能（例如）的关键问题。高隧道磁电阻。新型Spintronic设备开发的一个重要飞跃是用铁电的铁电替换绝缘屏障，从而增加了由屏障中极化方向引起的新的附加功能，从而导致隧道电阻（TER）。多体性隧道路口/pbzr $ _ {0.2} $ ti $ _ {0.8} $ o $ $ $ _ {3} $/la $ _ {2/3} $ _ {2/3} $ sr $ _ {1/3} $ MNO $ $ _3 $（CO/PZT/LSMO）代表 - 毫无疑问 - 毫无疑问 - 界面几何形状及其对运输特性的影响。在这里，我们使用互补技术，即X射线衍射和扩展的X射线吸收良好结构，与X射线磁性圆形二色性和AB-Initio计算相结合，在原子量表上提供了CO/PZT界面的首次分析。 CO/PZT接口由一个perovskite-Type氧化物氧化物单元单元[COO $ _ {2} $/coo/ti（Zr）o $ $ _ {2} $]组成，其本地有序的钴膜成长。钴的磁矩（M）在M = 2.3和M = 2.7 $μ_{B} $之间，而对于界面钛原子，它们很小（M =+0.005 $μ__{B} $），并且平行于Cobalt，这与Cobalt-OxiD-OxiD-OxiD-OxiD-OXEXIDE-OXED-OXEXIDE INTERAFEFENCE FACEFENCEFERAFE FACEFENCEREDEREFE。这些对界面和磁性特性之间原子关系的见解有望为将来的高TER设备铺平道路。
Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of spin-polarized electrons sensitively depends on the chemical composition and the atomic geometry of the lead/barrier interfaces their proper design is a key issue for achieving the required functionality of the devices such as e.g. a high tunnel magneto resistance. An important leap in the development of novel spintronic devices is to replace the insulating barrier by a ferroelectric which adds new additional functionality induced by the polarization direction in the barrier giving rise to the tunnel electro resistance (TER). The multiferroic tunnel junction Co/PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$/La$_{2/3}$Sr$_{1/3}$MnO$_3$ (Co/PZT/LSMO) represents an archetype system for which - despite intense studies - no consensus exists for the interface geometry and their effect on transport properties. Here we provide the first analysis of the Co/PZT interface at the atomic scale using complementary techniques, namely x-ray diffraction and extended x-ray absorption fine structure in combination with x-ray magnetic circular dichroism and ab-initio calculations. The Co/PZT interface consists of one perovskite-type cobalt oxide unit cell [CoO$_{2}$/CoO/Ti(Zr)O$_{2}$] on which a locally ordered cobalt film grows. Magnetic moments (m) of cobalt lie in the range between m=2.3 and m=2.7$μ_{B}$, while for the interfacial titanium atoms they are small (m=+0.005 $μ_{B}$) and parallel to cobalt which is attributed to the presence of the cobalt-oxide interface layers. These insights into the atomistic relation between interface and magnetic properties is expected to pave the way for future high TER devices.
