论文标题
CMOS双量子点和微波光子之间的大量色散相互作用
Large dispersive interaction between a CMOS double quantum dot and microwave photons
论文作者
论文摘要
我们报告了CMOS分裂的硅纳米线晶体管中双量子点的快速电荷状态读数，这是通过与混合整合与超导电敏感器形成的集体元件谐振器中的大型分散相互作用。我们通过利用不对称的拆分门设备的大型InterDot Gate杠杆臂，$α= 0.72 $，并通过向谐振器增加其障碍，$ z__ \ z__ \ z_ \ r} = 560〜$ $ g_0/（2π）= 204 \ pm 2 $ 2 $ MHz，$α= 0.72 $，$α= 0.72 $。在色散式中，双量子点杂交点处的较大耦合强度会产生与谐振器线宽相当的频移，这是最大状态可见性的最佳设置。我们利用这种制度来证明对电荷自由度的快速分散读数，SNR在50 ns中为3.3。在共振状态下，快速电荷的分解速率无法达到强耦合方案，但我们使用混合CMOS系统显示了向自旋光子电路量子电动力学的明确途径。
We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $α=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~Ω$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems.
