论文标题
电压和温度依赖性稀土掺杂剂对界面磁各向异性的贡献
Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy
论文作者
论文摘要
通过无电流电压控制磁性材料和设备的设备具有节能纳米尺度设备的承诺。在这里，我们研究了由磁性金属和非磁绝缘体（例如CO |（RE）| MGO）在磁性局部矩形处引起的磁各向异性的温度依赖性电压控制。根据史蒂文斯（Stevens）的晶体和施加场效应的代表，我们发现在室温下大量的四极固有和场诱导的界面各向异性。我们建议通过将其界面与稀土粉尘粉尘来提高过渡金属隧道连接的功能。
The control of magnetic materials and devices by voltages without electric currents holds the promise of power-saving nano-scale devices. Here we study the temperature-dependent voltage control of the magnetic anisotropy caused by rare-earth (RE) local moments at an interface between a magnetic metal and a non-magnetic insulator, such as Co|(RE)|MgO. Based on a Stevens operator representation of crystal and applied field effects, we find large dominantly quadrupolar intrinsic and field-induced interface anisotropies at room temperature. We suggest improved functionalities of transition metal tunnel junctions by dusting their interfaces with rare earths.
