论文标题
原位生长的单晶铝作为分子束外延（MBE）与N-ZNSE的非合成欧姆接触（MBE）
In-situ grown single crystal aluminum as a non-alloyed ohmic contact to n-ZnSe by molecular beam epitaxy (MBE)
论文作者
论文摘要
使用分子束外疗（MBE）沉积在外上一层生长的ZnSe（100）上的单晶膜（MBE），证明了与N-ZNSE的新型欧姆接触。电子反向散射衍射（EBSD）证实了Al膜的单晶结构。 （110）面向的Al层旋转旋转45 $^\ Circ $相对于基板，以匹配ZnSe（100）晶格常数。生长的al-ZNSE触点在大量的N-ZNSE兴奋剂范围内表现出几乎理想的欧姆特征，而没有任何其他治疗方法。接触电阻在10 $^{ - 3} $ $ $ $ -CM $ -CM $^{2} $的范围内，即使是轻度掺杂的Znse（$ \ sim $ 10 $^{17} $ cm $^{ - 3} $）。轻轻掺杂的ZNSE样品中漏水的Schottky行为表明Al-Znse形成了较低的屏障高度，Schottky极限接触。与文献中报道的其他报道的接触相比，与其他电阻较低的载体浓度相比，原位生长的Al可以作为与N-ZNSE的简单金属接触。报道的新型金属化方法可以极大地简化基于ZNSE的设备制造复杂性，并降低成本
Novel ohmic contacts to n-ZnSe are demonstrated using single crystal Al films deposited on epitaxially grown ZnSe (100) by molecular beam epitaxy (MBE). Electron Backscatter Diffraction (EBSD) confirmed the single crystalline structure of the Al films. The (110)-oriented Al layer was rotated rotated 45$^\circ$ relative to substrate to match the ZnSe (100) lattice constant. The as-grown Al-ZnSe contact exhibited nearly ideal ohmic characteristics over a large doping range of n-ZnSe without any additional treatment. The contact resistances are in a range of 10$^{-3}$ $Ω$-cm$^{2}$ for even lightly doped ZnSe ($\sim$10$^{17}$ cm$^{-3}$). Leaky Schottky behavior in lightly doped ZnSe samples suggested Al-ZnSe formed a low barrier height, Schottky limit contact. In-situ grown Al could act as a simple metal contact to n-ZnSe regardless of carrier concentration with lower resistance compared to other reported contacts in literatures. The reported novel metallization method could greatly simplify the ZnSe-based device fabrication complexity as well as lower the cost
