论文标题
分子束外延（MBE）生长的Znse-GAAS杂质结构的界面研究
Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures
论文作者
论文摘要
通过光致发光（PL）和透射电子显微镜（TEM）对ZNSE/GAAS和GAAS/ZNSE接口进行了全面研究，这是实现高质量ZNSE-GAAS（100）异质价值结构（HS）的一部分。检查了ZnSE/GAAS界面在GAA的不同表面终止下的性质。发现ZNSE/GA端的GAA具有优质的光学和微结构质量，其化学界面由GAAS和ZNSE原子成分的混合物组成。对于GAAS/ZNSE界面研究，使用低温迁移增强的外观（LT-MEE）生长技术在与ZNSE生长兼容的条件下生长GAAS层。研究了GA和AS定罪的LT-MEE GAAS/ZNSE界面。沿AS启动的GAAS/ZNSE接口观察到一个有缺陷的过渡层，这可能归因于编队Zn $ _3 $作为$ _2 $化合物。详细讨论了（GAAS/ZNSE和ZNSE/ZNSE/GAAS）接口的观察到的光学和结构特性与本研究中使用的生长条件之间的相关性。这项研究可以为Znse-Gaas HS的界面性质提供宝贵的见解。
Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces were carried out by photoluminescence (PL) and transmission electron microscopy (TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valent structures (HS). The nature of ZnSe/GaAs interface under different surface terminations of GaAs was examined. The ZnSe/Ga-terminated GaAs was found to have a superior optical and microstructural quality, with a chemical interface consisting of a mixture of both the GaAs and ZnSe atomic constituents. For GaAs/ZnSe interface studies, a low-temperature migration enhanced epitaxy (LT-MEE) growth technique was used to grow GaAs layers under the conditions compatible to the growth of ZnSe. Both Ga and As-initialized LT-MEE GaAs/ZnSe interfaces were investigated. A defective transition layer was observed along the As-initialized GaAs/ZnSe interface, which may be attributed to the formation Zn$_3$As$_2$ compound. The correlation between the observed optical as well as structural properties of both the (GaAs/ZnSe and ZnSe/GaAs) interfaces and the growth conditions used in this study are discussed in detail. This study could provide a valuable insight on the interface nature of ZnSe-GaAs HS.
