论文标题
外延散装声波谐振器作为量子声动力学高度相干的多声源
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
论文作者
论文摘要
固态量子声学（QAD）系统通过将声音声子与超导量或自旋量子耦合，为量子信息存储和处理提供了一个紧凑的平台。多模式复合材料高过时的大量声波谐振器（HBAR）是一种非常适合QAD的流行声子源。然而，复合传感器中缺陷，晶界和界面/表面粗糙度的散射严重限制了溅射沉积设备中的声子松弛时间。在这里，我们种植了一个外延 - hbar，由金属NBN底部电极和SIC底物上的压电GAN膜组成。来自传感器到声子腔的声阻抗匹配的EPI-HBAR具有> 99％的功率注入效率。光滑的接口和低缺陷密度可减少声子损失，使FXQ产品和声子寿命分别高达1.36 x 10^17 Hz和500微秒。 GAN/NBN/SIC EPI-HBAR是一种电动的，多模式的声子源，可以直接与基于NBN的超导量子台或基于SIC的自旋量子尺进行连接。
Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency > 99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding fxQ products and phonon lifetimes up to 1.36 x 10^17 Hz and 500 microseconds respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits.
