论文标题
超薄范德华(Van der waals Ferromagnet)中的成像域逆转
Imaging domain reversal in an ultrathin van der Waals ferromagnet
论文作者
论文摘要
最近的二维范德华的分离磁性材料已经发现了富裕的物理学,这些物理通常与它们的大量对应物的磁性不同。但是,控制磁性磁滞的基本过程(例如初始磁化或域逆转)的微观细节在超薄极限中基本上还不清楚。在这里,我们采用广场氮胶囊(NV)显微镜将这些过程直接在磁性半导体三碘化钒(VI $ _3 $)的几层薄片中成像。我们观察到大多数薄片在场上的大多数薄片的完全切换$ h_c \大约0.5-1 $ t(在5 k时)独立于厚度向下降至两个原子层,没有中间部分部分转化的状态。当温度接近库里温度时,强制场会降低($ t_c \大约50 $ k),但是,开关仍然突然。然后,我们对初始磁化过程进行映像,该过程揭示了厚度依赖性域墙壁含量低于$ h_c $。这些结果表明超薄vi $ _3 $是成核型硬铁磁铁,其中强制性场是由各向异性限制的域壁成核场设置的。这项工作说明了广场NV显微镜研究范德华(Van der Waals)铁磁体中的磁化过程的力量,这些过程可用于阐明其他材料的硬铁磁特性的起源,并探索场和电流驱动的域壁动力学。
The recent isolation of two-dimensional van der Waals magnetic materials has uncovered rich physics that often differs from the magnetic behaviour of their bulk counterparts. However, the microscopic details of fundamental processes such as the initial magnetization or domain reversal, which govern the magnetic hysteresis, remain largely unknown in the ultrathin limit. Here we employ a widefield nitrogen-vacancy (NV) microscope to directly image these processes in few-layer flakes of magnetic semiconductor vanadium triiodide (VI$_3$). We observe complete and abrupt switching of most flakes at fields $H_c\approx0.5-1$ T (at 5 K) independent of thickness down to two atomic layers, with no intermediate partially-reversed state. The coercive field decreases as the temperature approaches the Curie temperature ($T_c\approx50$ K), however, the switching remains abrupt. We then image the initial magnetization process, which reveals thickness-dependent domain wall depinning fields well below $H_c$. These results point to ultrathin VI$_3$ being a nucleation-type hard ferromagnet, where the coercive field is set by the anisotropy-limited domain wall nucleation field. This work illustrates the power of widefield NV microscopy to investigate magnetization processes in van der Waals ferromagnets, which could be used to elucidate the origin of the hard ferromagnetic properties of other materials and explore field- and current-driven domain wall dynamics.