论文标题
石墨烯/铁电伏洛伏型异质结构中的光学重写记忆
Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure
论文作者
论文摘要
实现逻辑元素的光学操作，尤其是涉及2D层的逻辑元素，可以打开长期以来的光学计算时代。但是，当前缺少2D材料（包括内存效应）的电子性质的有效光学调制。在这里，我们报告了具有写入/擦除选项的石墨烯的电导率的完全光学控制，但在超高光通量下。随后的松弛过程中，光诱导的电荷底物中的光诱导的电荷产生之间的竞争为选择性的光载体捕获控制提供了影响2D叠加剂掺杂的选择性光载体。这些发现为所有光电调节器以及各种全光逻辑电路，记忆和现场效应晶体管的2D设备的光子控制开辟了道路。
Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical fluence. The competition between light-induced charge generation in ferroelectric-photovoltaic substrate with subsequent relaxation processes provides the selective photocarrier trapping control affecting the doping of 2D overlayer. These findings open the road to photonic control of 2D devices for all -optical modulators and a variety of all-optical logic circuits, memories and field-effect transistors.
