论文标题
热通量归一化旋转薄膜的索贝克系数的测量与温度的关系
Measurement of the heat flux normalised spin Seebeck coefficient of thin films as a function of temperature
论文作者
论文摘要
旋转Seebeck效应（SSE）对潜在的高效率收集应用产生了对热电和磁性群落的兴趣，并作为纯自旋电流的来源引起了旋转效率收集应用的兴趣。为了理解潜在机制，需要在一系列温度范围内表征潜在材料，但是，对于薄膜，已证明对施加温度梯度的默认测量（在样品中）被证明被热电阻的存在损害。在这里，我们演示了一种执行低温SSE测量的方法，其中使用两个校准的热通量传感器来测量通过样品的热通量，而不是监测温度梯度。这具有测量通过样品的热量损失，并提供可靠的方法来使薄膜样品的SSE响应归一化。我们用$ \ text {sio} _ {2}/\ text {fe} _ {3} o_ {4}/\ text {pt} $样本演示了这种方法$ \ text {fe} _ {3} \ text {o} _ {4} $并量化$ t _ {\ text {v}} $上方和下方的热磁响应。
The spin Seebeck effect (SSE) has generated interest in the thermoelectric and magnetic communities for potential high efficiency energy harvesting applications, and spintronic communities as a source of pure spin current. To understand the underlying mechanisms requires characterisation of potential materials across a range of temperatures, however, for thin films the default measurement of an applied temperature gradient (across the sample) has been shown to be compromised by the presence of thermal resistances. Here, we demonstrate a method to perform low temperature SSE measurements where instead of monitoring the temperature gradient, the heat flux passing through the sample is measured using two calibrated heat flux sensors. This has the advantage of measuring the heat loss through the sample as well as providing a reliable method to normalise the SSE response of thin film samples. We demonstrate this method with an $\text{SiO}_{2}/\text{Fe}_{3}O_{4}/\text{Pt}$ sample, where a semiconducting-insulating transition occurs at the Verwey transition, $T_{\text{V}}$, of $\text{Fe}_{3}\text{O}_{4}$ and quantify the thermomagnetic response above and below $T_{\text{V}}$.
