论文标题
动态重新配置的微波电路利用突然的相变材料
Dynamically Reconfigurable Microwave Circuits Leveraging Abrupt Phase-Change Material
论文作者
论文摘要
本文提出了一个概念，用于通过利用相变材料（PCM）中的突然导电率过渡来动态重新配置分布式微波电路。金属表面含量（<< $λ$）嵌入PCM膜$ - $ $ - 二氧化衣（VO2）$ - $ - 提供低损坏和重新配置性。为了验证这一概念，设计和制造了各种co-Planar波导传输线，并在VO2膜中使用金属表面插入制造，并且该线的性能的特征最高为50 GHz。测量结果用于开发基于传输线的模型和具有表面嵌入的VO2的等效电路模型，以帮助新结构的快速设计。此外，开发了电磁模型，并表明损耗可能接近具有100至200 nm厚的VO2膜的常规金属分布式电路。对于这些较厚的膜，设计和模拟了两个实用的实现：可调偶极子从2.13到9.07 GHz，以及一个可调三重速度匹配的网络，从5到40 GHz，高$ |γ| $。因此，所提出的方法对于在微波和低毫米波带中实现任意可编程的分布式电路和天线似乎可行。
This article proposes a concept for dynamically reconfigurable distributed microwave circuits by leveraging the abrupt conductivity transition in phase-change materials (PCM). Metallic surface-inclusions (<<$λ$) are embedded in the PCM film$-$vanadium dioxide (VO2)$-$to provide low-loss and reconfigurability. To validate this concept, a variety of co-planar waveguide transmission lines are designed and fabricated with metallic surface-inclusions in VO2 films, and the lines' performance are characterized up to 50 GHz. The measured results are used to develop a transmission-line based model and an equivalent circuit model of the VO2 with surface-inclusions to aid in the rapid design of new structures. Additionally, an electromagnetic model was developed and indicates that loss can be close to that of conventional metallic distributed circuits with 100 to 200 nm thick VO2 films. With these thicker films, two practical realizations of this concept were designed and simulated: a tunable dipole from 2.13 to 9.07 GHz and a tunable triple-stub matching network from 5 to 40 GHz with high $|Γ|$. Therefore, the proposed method appears viable for the realization of arbitrary programmable distributed circuits and antennas in the microwave and low-millimeter-wave bands.
