论文标题
突然掺杂的硅纳米线隧道连接
Abrupt degenerately-doped silicon nanowire tunnel junctions
论文作者
论文摘要
我们已经证实存在狭窄，掺杂的轴向硅纳米线（SINW）$ p $ - $ n $ n $ n $连接，这是通过离轴电子全息（EH）的。 SINW是通过使用黄金（AU）作为催化剂的蒸气 - 溶液（VLS）机制生长的 生长。进行了两种类型的增长，在每种情况下，我们都以$ n $/$ p $和$ p $/$ n $序列探索增长。在第一种类型中，我们突然在所需的结位置切换了掺杂剂前体，在第二种类型的位置，我们减慢了连接处的生长速度，以使掺杂剂很容易离开AU催化剂。我们展示了掺杂的$ p $/$ n $和$ n $/$ p $ nanowire段，突然潜在的概况为$ 1.02 \ pm0.02 $和$ 0.86 \ pm0.3 $ v，而耗尽的区域宽度狭窄到$ 10 \ pm1 $ nm nm nm vivia nm nm nm nm nm nm nm nm nm。低温电流 - 电压测量表明，向前方向上的不对称曲率类似于平面金掺杂的隧道连接，其中隧道电流被大量过量电流隐藏。本文提供的结果表明，直接VLS的直接VLS增长是可行的，$ n $ p $ - $ n $连接是可行的，这是制造更复杂的基于SINW的电子和太阳能设备的重要一步。
We have confirmed the presence of narrow, degenerately-doped axial silicon nanowire (SiNW) $p$-$n$ junctions via off-axis electron holography (EH). SiNWs were grown via the vapor-solid-liquid (VLS) mechanism using gold (Au) as the catalyst, silane (SiH$_{4}$), diborane (B$_{2}$H$_{6}$) and phosphine (PH$_{3}$) as the precursors, and hydrochloric acid (HCl) to stabilize the growth. Two types of growth were carried out, and in each case we explored growth with both $n$/$p$ and $p$/$n$ sequences. In the first type, we abruptly switched the dopant precursors at the desired junction location, and in the second type we slowed the growth rate at the junction to allow the dopants to readily leave the Au catalyst. We demonstrate degenerately-doped $p$/$n$ and $n$/$p$ nanowire segments with abrupt potential profiles of $1.02\pm0.02$ and $0.86\pm0.3$ V, and depletion region widths as narrow as $10\pm1$ nm via EH. Low temperature current-voltage measurements show an asymmetric curvature in the forward direction that resemble planar gold-doped tunnel junctions, where the tunneling current is hidden by a large excess current. The results presented herein show that the direct VLS growth of degenerately-doped axial SiNW $p$-$n$ junctions is feasible, an essential step in the fabrication of more complex SiNW-based devices for electronics and solar energy.
