论文标题
血浆热电子的相干掺杂在二维半导体中控制带隙控制
Bandgap Control in Two-Dimensional Semiconductors via Coherent Doping of Plasmonic Hot Electrons
论文作者
论文摘要
对于半导体技术，带隙控制至关重要。传统的控制手段是用电荷载体对晶格进行化学，电或光学的浓度。在这里，我们首次在二维（2D）半导体中首次证明了可调的带隙（在室温下高达650 MeV），通过用等离激元热电子将晶格掺杂，以二维（2D）半导体。特别是，我们将钨硫化物（WS $ _2 $）单层整合到一个自组装的等离子体晶体中，这可以在半导体激子和等离子体共振之间连贯耦合。伴随着这个过程，等离子引起的热电子可以反复填充WS $ _2 $的传统带，从而导致种群反演，并在带结构和激子松弛中重建。我们的发现为2D半导体的工程师的光学响应提供了一种创新和有效的措施，从而使光子和光电设备的设计和优化具有出色的弹性。
Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely tunable bandgap (renormalisation up to 650 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently doping the lattice with plasmonic hot electrons. In particular, we integrate tungsten-disulfide (WS$_2$) monolayers into a self-assembled plasmonic crystal, which enables coherent coupling between semiconductor excitons and plasmon resonances. Accompanying this process, the plasmon-induced hot electrons can repeatedly fill the WS$_2$ conduction band, leading to population inversion and a significant reconstruction in band structures and exciton relaxations. Our findings provide an innovative and effective measure to engineer optical responses of 2D semiconductors, allowing a great flexiblity in design and optimisation of photonic and optoelectronic devices.
