论文标题
INAS/GAAS耦合量子点对中的隧道共振的光谱拓宽光谱过渡
Spectral broadening of optical transitions at tunneling resonances in InAs/GaAs coupled quantum dot pairs
论文作者
论文摘要
我们报告了INAS/GAAS耦合量子点中光学转变的线宽分析，这是偏置电压，温度和隧道偶联强度的函数。在孔洞隧道共振上观察到一条显着的线路扩展到最高100 $μ$ eV，在空间直接和间接激子状态之间的相干隧道耦合被最大化，对应于150 ns $ {}^{}^{-1} $的150 ns $ {}^{ - 1} $的转换率的温度越来越宽，对应于越来越广泛的温度范围。线宽作为隧道耦合强度的函数，跟踪了由于声子辅助的过渡而拓宽线宽的理论预测，并通过在两个激子分支之间的能量分配为0.8 $ -0.9 $ 0.9 MEV。该报告强调了这些系统与当地环境之间相互作用的线宽扩展机制和基本方面。
We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $μ$eV is observed at hole tunneling resonances where the coherent tunnel coupling between spatially direct and indirect exciton states is maximized, corresponding to a phonon-assisted transition rate of 150 ns${}^{-1}$ at 20 K. With increasing temperature, the linewidth shows broadening characteristic of single-phonon transitions. The linewidth as a function of tunnel coupling strength tracks the theoretical prediction of linewidth broadening due to phonon-assisted transitions, and is maximized with an energy splitting between the two exciton branches of 0.8$-$0.9 meV. This report highlights the linewidth broadening mechanisms and fundamental aspects of the interaction between these systems and the local environment.
