论文标题
$ν= 5/2 $ Quantum Hall效果
Topological Interface between Pfaffian and anti-Pfaffian Order in $ν=5/2$ Quantum Hall Effect
论文作者
论文摘要
最近的热厅实验将新能量泵送到$ν= 5/2 $量子大厅效应的问题中,该效果基于由Pfaffian和抗Pfaffian拓扑命令组成的介镜水坑的形成而进行了新的解释。在这里,我们研究了Pfaffian和抗Pfaffian状态之间的界面,该界面可能通过最新的圆柱几何形状上的最新密度 - 密度 - 密度重新归化组模拟在热传输中起着至关重要的作用。我们提供了令人信服的证据,这些证据表明PFAFFIAN和抗Pfaffian状态的边缘模式在界面周围彼此之间强烈杂交。此外,我们证明了在界面处出现的固有电偶极矩,类似于N型和P型半导体之间的“ P-N”连接。重要的是,我们阐明了这个偶极时刻的拓扑起源,其形成是为了抵消指导中心的霍尔在散装PFAFFIAN和抗Pfaffian状态的不匹配。
Recent thermal Hall experiment pumped new energy into the problem of $ν=5/2$ quantum Hall effect, which motivated novel interpretations based on formation of mesoscopic puddles made of Pfaffian and anti-Pfaffian topological orders. Here, we study an interface between the Pfaffian and anti-Pfaffian states, which may play crucial roles in thermal transport, by means of state-of-the-art density-matrix renormalization group simulations on the cylinder geometry. We provide compelling evidences that indicate the edge modes of the Pfaffian and anti-Pfaffian state strongly hybridize with each other around the interface. Moreover, we demonstrate an intrinsic electric dipole moment emerges at the interface, similar to the "p-n" junction sandwiched between N-type and P-type semiconductor. Importantly, we elucidate the topological origin of this dipole moment, whose formation is to counterbalance the mismatch of guiding-center Hall viscosity of bulk Pfaffian and anti-Pfaffian state.